Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN+PNP
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Technical parameters/rated voltage: 50 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: SOT-553-5
External dimensions/packaging: SOT-553-5
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: -
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSTB1005DXV5T1
|
ON Semiconductor | 类似代替 | SOT-553-5 |
双共基极 - 集电极偏置电阻晶体管 Dual Common Base-Collector Bias Resistor Transistors
|
||
NSTB1005DXV5T5
|
ON Semiconductor | 功能相似 | SOT-553 |
双共基极 - 集电极偏置电阻晶体管 Dual Common Base-Collector Bias Resistor Transistors
|
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