Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 89.0 A
Technical parameters/dissipated power: 893 W
Technical parameters/input capacitance: 10.6 nF
Technical parameters/gate charge: 200 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 89.0 A
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 10550pF @25V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 893000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264
External dimensions/packaging: TO-264
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT50M50L2FLLG
|
Microsemi | 完全替代 | TO-264 |
TO-264 N-CH 500V 89A
|
||
IXFK80N50P
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
IXFK80N50P 系列 500 V 65 mOhm N 沟道 增强模式 功率 MOSFET
|
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