Technical parameters/rated current: 10.0 mA
Technical parameters/drain source resistance: 150 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/Continuous drain current (Ids): 15.0 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 | SOT-23-3 |
JFET VHF / UHF放大器晶体管N通道 JFET VHF/UHF Amplifier Transistor N-Channel
|
||
MMBF4416LT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
JFET VHF / UHF放大器晶体管N通道 JFET VHF/UHF Amplifier Transistor N-Channel
|
||
MMBF5486
|
Freescale | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBF5486.. 场效应管, JFET, N沟道, -25V, SOT-23
|
||
MMBF5486
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBF5486.. 场效应管, JFET, N沟道, -25V, SOT-23
|
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