Technical parameters/frequency: 900 MHz
Technical parameters/rated voltage (DC): 12.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 225 mW
Technical parameters/gain bandwidth product: 10000 MHz
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 11dB ~ 15.5dB
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 270
Technical parameters/rated power (Max): 225 mW
Technical parameters/DC current gain (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/length: 3.06 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: TO-253-4
Physical parameters/operating temperature: 0℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT-32011-TR1G
|
AVAGO Technologies | 类似代替 | TO-253-4 |
射频(RF)双极晶体管 Transistor Si Low Current
|
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