Technical parameters/rated voltage (DC): 12.0 V
Technical parameters/rated current: 60.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 10dB ~ 18.5dB
Technical parameters/minimum current amplification factor (hFE): 30 @10mA, 8V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: Micro-X
External dimensions/packaging: Micro-X
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
HP | 功能相似 |
RF Bipolar Transistor
|
|||
AT-41435G
|
Broadcom | 类似代替 | Micro-X |
Trans GP BJT NPN 12V 0.06A 4Pin Case 35 Micro-X
|
||
AT-41435G
|
AVAGO Technologies | 类似代替 | Micro-X |
Trans GP BJT NPN 12V 0.06A 4Pin Case 35 Micro-X
|
||
MRF951
|
Advanced Semiconductor | 功能相似 |
RF Small Signal Bipolar Transistor, 0.1A I(C), L Band, Silicon, NPN
|
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