Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 5.5 V
Technical parameters/gain: 9dB ~ 11dB
Technical parameters/minimum current amplification factor (hFE): 70 @1mA, 2.7V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 1.2 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT-31033-TR1G
|
AVAGO Technologies | 完全替代 | SOT-23-3 |
Trans RF BJT NPN 5.5V 0.016A 3Pin SOT-23 T/R
|
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