Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -700 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.665 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.7A
Technical parameters/minimum current amplification factor (hFE): 150 @100mA, 3V
Technical parameters/rated power (Max): 342 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 665 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-74-6
External dimensions/length: 3 mm
External dimensions/width: 1.5 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SC-74-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2131T3
|
ON Semiconductor | 功能相似 | SC-74 |
通用晶体管 General Purpose Transistors
|
||
NSS30070MR6T1G
|
ON Semiconductor | 类似代替 | SC-74-6 |
30 V ， 0.7 A ，低VCE （ sat）的PNP晶体管 30 V, 0.7 A, Low VCE(sat) PNP Transistor
|
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