Technical parameters/number of circuits: 1
Technical parameters/Maximum reverse voltage (Vrrm): 43.6V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 48.5 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMB
External dimensions/packaging: SMB
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P6SMB51CAT3G
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ON Semiconductor | 类似代替 | DO-214AA |
600W 齐纳 SMT 瞬态电压抑制器,P6SMB 系列(双向) ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器,On Semiconductor
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