Technical parameters/dissipated power: 160W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 3600pF @25V(Vds)
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP47P06
|
Freescale | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP47P06 晶体管, MOSFET, P沟道, -47 A, -60 V, 0.021 ohm, -10 V, -4 V 新
|
||
FQP47P06
|
Fairchild | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP47P06 晶体管, MOSFET, P沟道, -47 A, -60 V, 0.021 ohm, -10 V, -4 V 新
|
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