Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 1000 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 10000 @100mA, 5V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 125MHz (Min)
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2925
|
NTE Electronics | 功能相似 | TO-226 |
NTE ELECTRONICS 2N2925 Bipolar (BJT) Single Transistor, NPN, 50V, 360mW, 100mA, 400 hFE
|
||
2N2925
|
Central Semiconductor | 功能相似 | TO-226-3 |
NTE ELECTRONICS 2N2925 Bipolar (BJT) Single Transistor, NPN, 50V, 360mW, 100mA, 400 hFE
|
||
2N2925
|
Motorola | 功能相似 | TO-92 |
NTE ELECTRONICS 2N2925 Bipolar (BJT) Single Transistor, NPN, 50V, 360mW, 100mA, 400 hFE
|
||
2SC1213
|
HITACHI | 功能相似 |
NPN硅外延 Silicon NPN Epitaxial
|
|||
BC560B
|
Continental Device | 功能相似 |
Transistor PNP BC560/BC560B CONTINENTAL DEVICE RoHS Ampere=1V=45 TO92
|
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