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Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/dissipated power (Max): 44W (Tc)
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Catalog: MOS(Field Effect Transistor
Other/continuous drain current (Id) (at 25 ° C): 2A（Tc）
Other/leakage source voltage (Vdss): 600V
Other/gate source threshold voltage (maximum value): 4V @ 250uA
Other/leakage source conduction resistance (maximum value): 4.2 Ω @ 1A，10V
Other/power dissipation (maximum value): 44W（Tc）
Other/Product Code: C171705
Other/Gross weight of goods: 0.002375kg
Other/Packaging Specifications: TO-220(TO-220-3)
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