Technical parameters/drain source resistance: 6 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 30A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 2550pF @10V(Vds)
Technical parameters/rated power (Max): 65 W
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD150NH02LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道24V- 0.003Ω - 150A - ClipPAK ™ - IPAK的STripFET ™伊犁功率MOSFET N-channel 24V- 0.003Ω - 150A - ClipPAK™ - IPAK STripFET™ IlI Power MOSFET
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