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Model SUP60N06-12P-E3
Description Mosfet, Power; 60V; 60A; Power, 100W; R(ds), 0.012Ω; TO-220AB
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Brand: Vishay Siliconix
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3909) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.019 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 100 W

Technical parameters/input capacitance: 1970pF @30V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Input capacitance (Ciss): 1970pF @30V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3.25W (Ta), 100W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.51 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SUP60N06-12P-GE3 SUP60N06-12P-GE3 Vishay Semiconductor 完全替代 TO-220
Mosfet, Power; 60V; 60A; Power, 100W; R(ds), 0.012Ω; Halogen-Free; TO-220AB
PDF
SUP60N06-12P-GE3 SUP60N06-12P-GE3 VISHAY 完全替代 TO-220-3
Mosfet, Power; 60V; 60A; Power, 100W; R(ds), 0.012Ω; Halogen-Free; TO-220AB
PDF
SUP60N06-12P-GE3 SUP60N06-12P-GE3 Vishay Intertechnology 完全替代 TO-220-3
Mosfet, Power; 60V; 60A; Power, 100W; R(ds), 0.012Ω; Halogen-Free; TO-220AB
PDF

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