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Model SUP85N10-10-GE3
Description N Channel MOSFET, 100V to 150V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: Vishay Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
32.11  yuan 32.11yuan
1+:
$ 39.1779
10+:
$ 36.9300
100+:
$ 35.2601
250+:
$ 35.0032
500+:
$ 34.7463
1000+:
$ 34.4572
2500+:
$ 34.2003
5000+:
$ 34.0398
Quantity
1+
10+
100+
250+
500+
Price
$39.1779
$36.9300
$35.2601
$35.0032
$34.7463
Price $ 39.1779 $ 36.9300 $ 35.2601 $ 35.0032 $ 34.7463
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9110) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 0.0085 Ω

Technical parameters/dissipated power: 250 W

Technical parameters/threshold voltage: 1 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/rise time: 90 ns

Technical parameters/Input capacitance (Ciss): 6550pF @25V(Vds)

Technical parameters/descent time: 130 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 250000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.41 mm

External dimensions/width: 4.7 mm

External dimensions/height: 9.01 mm

External dimensions/packaging: TO-220-3

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Customs information/ECCN code: EAR99

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