Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.75W (Ta), 107W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM60N10-17
|
Visay | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
|||
SUM60N10-17
|
Vishay Semiconductor | 功能相似 | TO-263 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
||
SUM60N10-17-E3
|
Vishay Semiconductor | 类似代替 | TO-263 |
Trans MOSFET N-CH 100V 60A 3Pin(2+Tab) TO-263
|
||
SUM60N10-17-E3
|
VISHAY | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 100V 60A 3Pin(2+Tab) TO-263
|
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