Technical parameters/drain source resistance: 0.036 Ω
Technical parameters/dissipated power: 136 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 4600pF @50V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/dissipated power (Max): 8.3W (Ta), 136W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1043
|
Vishay Intertechnology | 功能相似 |
Fixed Resistor, Metal Glaze/thick Film, 0.75W, 430ohm, 400V, 5% +/-Tol, 200ppm/Cel, Surface Mount, 2010, CHIP, HALOGEN FREE AND ROHS COMPLIANT
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SUD50P10-43-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 100V 38A TO252
|
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SUD50P10-43-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET P-CH 100V 38A TO252
|
||
SUD50P10-43L-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-2 |
Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
|
||
SUD50P10-43L-GE3
|
VISHAY | 功能相似 | TO-252-2 |
Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
|
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