Technical parameters/drain source resistance: 11.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 62.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 50.0 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1130pF @25V(Vds)
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 7500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
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