Technical parameters/drain source resistance: 95.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 88W (Tc)
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/Input capacitance (Ciss): 900pF @25V(Vds)
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP18N15-95
|
Visay | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
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