Technical parameters/dissipated power: 3.75 W
Technical parameters/dissipated power (Max): 3.75W (Ta), 100W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB8444
|
Rochester | 功能相似 | D2PAK |
N沟道的PowerTrench ? MOSFET 40V , 70A , 5.5mOhm N-Channel PowerTrench? MOSFET 40V, 70A, 5.5mOhm
|
||
FDB8445
|
ON Semiconductor | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FDB8445 场效应管, MOSFET, N沟道, 40V, 0.0068Ω, 70A, TO-263AB-3
|
||
FDB8445
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FDB8445 场效应管, MOSFET, N沟道, 40V, 0.0068Ω, 70A, TO-263AB-3
|
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