Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0156 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 13.6 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): -90.0 A
Technical parameters/rise time: 510 ns
Technical parameters/Input capacitance (Ciss): 11100pF @50V(Vds)
Technical parameters/rated power (Max): 375 W
Technical parameters/descent time: 870 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 13600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM90P10-19-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET P-CH 100V 90A D2PAK
|
||
SUM90P10-19-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 100V 90A D2PAK
|
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