Technical parameters/drain source resistance: 0.0105 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 88 W
Technical parameters/input capacitance: 3100pF @25V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Technical parameters/thermal resistance: 1.7℃/W (RθJC)
Technical parameters/Input capacitance (Ciss): 3100pF @25V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 8.3W (Ta), 88W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 功能相似 | TO-263 |
Trans MOSFET N-CH 30V 70A 3Pin(2+Tab) TO-263
|
||
SUM70N03-09CP-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 30V 70A 3Pin(2+Tab) TO-263
|
||
SUM70N03-09CP-E3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 30V 70A 3Pin(2+Tab) TO-263
|
||
|
|
Vishay Intertechnology | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 30V 70A 3Pin(2+Tab) TO-263
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review