Technical parameters/dissipated power: 6.8W (Ta), 65W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 2550pF @10V(Vds)
Technical parameters/dissipated power (Max): 6.8W (Ta), 65W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD150NH02LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道24V- 0.003Ω - 150A - ClipPAK ™ - IPAK的STripFET ™伊犁功率MOSFET N-channel 24V- 0.003Ω - 150A - ClipPAK™ - IPAK STripFET™ IlI Power MOSFET
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