Technical parameters/forward voltage: 1.8V @1.5A
Technical parameters/reverse recovery time: 35 ns
Technical parameters/forward voltage (Max): 1.8V @1.5A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: GP-20
External dimensions/length: 9.5 mm
External dimensions/width: 5.3 mm
External dimensions/height: 5.3 mm
External dimensions/packaging: GP-20
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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UNI-ROYAL | 功能相似 | DO-27 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
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1N5402G
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Shanghai Sunrise Electronics | 功能相似 |
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1N5402G
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1N5402G
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ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
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1N5402G
|
Bytes | 功能相似 |
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1N5402G
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ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
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ON Semiconductor | 功能相似 | DO-201AD |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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Zowie Technology | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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Vishay Semiconductor | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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EGP30D
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Shanghai Lunsure Electronic | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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EGP30D
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Jinan Jing Heng Electronics Co | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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EGP30D
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Sunmate | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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EGP30D
|
Rugao Dachang Electronics | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
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EGP30D
|
Unspecified | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
JANTX1N5806
|
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Diode Switching Diode 150V 2.5A 2Pin Case G-111
|
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