Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0074 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 136 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 50.0 A
Technical parameters/rise time: 15 ns
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 类似代替 | Surface Mount |
VISHAY SUD50N06-07L-GE3 晶体管, MOSFET, N沟道, 96 A, 60 V, 0.0061 ohm, 10 V, 1 V
|
||
SUD50N06-07L-GE3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
VISHAY SUD50N06-07L-GE3 晶体管, MOSFET, N沟道, 96 A, 60 V, 0.0061 ohm, 10 V, 1 V
|
||
SUD50N06-09L
|
Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET 60V 50A 136W Logic Level
|
||
SUD50N06-09L
|
Vishay Intertechnology | 功能相似 |
MOSFET 60V 50A 136W Logic Level
|
|||
SUD50N06-09L
|
VISHAY | 功能相似 | TO-252 |
MOSFET 60V 50A 136W Logic Level
|
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