Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 8.2A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 2600pF @50V(Vds)
Technical parameters/rated power (Max): 3 W
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD35N10-26P-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) TO-252AA
|
||
SUD35N10-26P-E3
|
Vishay Semiconductor | 类似代替 |
Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) TO-252AA
|
|||
SUD50N10-18P-GE3
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 8.2A DPAK
|
||
SUD50N10-18P-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 8.2A DPAK
|
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