Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 46.8 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 17.5 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD50N03-12P-E3
|
VISHAY | 功能相似 | TO-252 |
Power Field-Effect Transistor, 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
|
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