Technical parameters/polarity: NPN
Technical parameters/dissipated power: 900 mW
Technical parameters/gain bandwidth product: 50 MHz
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/minimum current amplification factor (hFE): 40 @1A, 2V
Technical parameters/rated power (Max): 900 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.95 mm
External dimensions/width: 3.94 mm
External dimensions/height: 4.95 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STX715
|
ST Microelectronics | 功能相似 | TO-226-3 |
NPN型中功率晶体管 NPN MEDIUM POWER TRANSISTOR
|
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