Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2800 mW
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 8 @2A, 5V
Technical parameters/rated power (Max): 2.8 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 4.95 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STBV42
|
ST Microelectronics | 类似代替 | TO-92-3 |
STMICROELECTRONICS STBV42 单晶体管 双极, NPN, 400 V, 1 W, 750 mA, 10 hFE
|
||
STX13005-APH
|
ST Microelectronics | 类似代替 | TO-226-3 |
双极晶体管 - 双极结型晶体管(BJT) Hi Vltg Fast Switch NPN Pwr Transistr
|
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