Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 29.0 A
Technical parameters/drain source resistance: 130 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350W (Tc)
Technical parameters/input capacitance: 6.45 nF
Technical parameters/gate charge: 200 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 18.3 A, 29.0 A
Technical parameters/Input capacitance (Ciss): 6450pF @25V(Vds)
Technical parameters/rated power (Max): 350 W
Technical parameters/dissipated power (Max): 350W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW20NK50Z
|
ST Microelectronics | 类似代替 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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