Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 330 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/rise time: 65 ns
Technical parameters/Input capacitance (Ciss): 6750pF @25V(Vds)
Technical parameters/rated power (Max): 330 W
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 330W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.75 mm
External dimensions/width: 5.15 mm
External dimensions/height: 20.15 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP210N75F6
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP210N75F6 晶体管, MOSFET, N沟道, 120 A, 75 V, 0.003 ohm, 10 V, 2 V
|
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