Technical parameters/dissipated power: 190 W
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Input capacitance (Ciss): 2700pF @100V(Vds)
Technical parameters/rated power (Max): 190 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 190W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.75 mm
External dimensions/width: 5.15 mm
External dimensions/height: 20.15 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 功能相似 | TO-247-3 |
Ç超级结MOSFET C Super Junction MOSFET
|
||
APT38N60BC6
|
Microsemi | 功能相似 | TO-247-3 |
Ç超级结MOSFET C Super Junction MOSFET
|
||
STW32N65M5
|
ST Microelectronics | 类似代替 | TO-247-3 |
N沟道650 V， 0.095 I© ， 24 A， MDmeshâ ?? ¢在D²PAK ， I²PAK V功率MOSFET ， TO- 220FP ， TO- 220 ， TO- 247 N-channel 650 V, 0.095 Ω, 24 A, MDmesh⢠V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247
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