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Model STV160NF02LT4
Description NChannel 20V -0.0016 Î © - 160A PowerSO - 10 STripFETâ ?? II Power MOSFET N-CHANNEL 20V -0.0016 Î © - 160A PowerSO-10 STripFET™ II POWER MOSFET
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Brand: ST Microelectronics
Packaging PowerSO-10
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5313) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 20.0 V

Technical parameters/rated current: 160 A

Technical parameters/drain source resistance: 1.60 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 210W (Tc)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±15.0 V

Technical parameters/Continuous drain current (Ids): 160 A

Technical parameters/rise time: 800 ns

Technical parameters/Input capacitance (Ciss): 4800pF @15V(Vds)

Technical parameters/rated power (Max): 210 W

Technical parameters/dissipated power (Max): 210W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 12

Encapsulation parameters/Encapsulation: PowerSO-10

External dimensions/packaging: PowerSO-10

Physical parameters/operating temperature: 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STV160NF02LAT4 STV160NF02LAT4 ST Microelectronics 类似代替 PowerSO-10
N-CH 20V 160A
PDF
STV300NH02L STV300NH02L ST Microelectronics 类似代替 PowerSO-10
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
PDF

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