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Description N Channel STripFET ™ DeepGate ™, STMicroelectronics STripFET ™ MOSFET, The bandwidth breakdown voltage range can provide ultra-low gate telephone and low on resistance. ###MOSFET transistor, STMicroelectronics
Product QR code
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.22  yuan 6.22yuan
10+:
$ 7.4652
100+:
$ 7.0919
500+:
$ 6.8431
1000+:
$ 6.8307
2000+:
$ 6.7809
5000+:
$ 6.7187
7500+:
$ 6.6689
10000+:
$ 6.6440
Quantity
10+
100+
500+
1000+
2000+
Price
$7.4652
$7.0919
$6.8431
$6.8307
$6.7809
Price $ 7.4652 $ 7.0919 $ 6.8431 $ 6.8307 $ 6.7809
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8006) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 5.5 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 70 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/leakage source breakdown voltage: 40 V

Technical parameters/Continuous drain current (Ids): 80A

Technical parameters/rise time: 7.6 ns

Technical parameters/Input capacitance (Ciss): 2150pF @25V(Vds)

Technical parameters/descent time: 11.9 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 70W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/length: 6.6 mm

External dimensions/width: 2.4 mm

External dimensions/height: 6.2 mm

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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