Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 950 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 110 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/Continuous drain current (Ids): 6A
Technical parameters/rise time: 8.3 ns
Technical parameters/Input capacitance (Ciss): 360pF @100V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 20.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.4 mm
External dimensions/height: 6.2 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD7N80K5
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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