Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 4.00 A
Technical parameters/output current: ≤4.00 A
Technical parameters/load current: 4 A
Technical parameters/forward voltage: 1.05V @4A
Technical parameters/polarity: Standard
Technical parameters/reverse recovery time: 30 ns
Technical parameters/forward current: 4000 mA
Technical parameters/Maximum forward surge current (Ifsm): 70 A
Technical parameters/forward voltage (Max): 1.05V @4A
Technical parameters/forward current (Max): 4 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 175℃ (Max)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYW29ED-200,118
|
NXP | 功能相似 | TO-252-3 |
Diode Switching 200V 8A 3Pin(2+Tab) DPAK T/R
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||
BYW29ED-200,118
|
We En Semiconductor | 功能相似 | TO-252-3 |
Diode Switching 200V 8A 3Pin(2+Tab) DPAK T/R
|
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BYW4200B-TR
|
ST Microelectronics | 类似代替 | TO-252-3 |
Diode Switching 200V 4A 3Pin(2+Tab) DPAK T/R
|
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STTH4R02B
|
ST Microelectronics | 完全替代 | TO-252-3 |
超快恢复二极管 Ultrafast recovery diode
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