Technical parameters/rated current: 4.00 A
Technical parameters/drain source resistance: 55.0 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 4.00 A, 3.00 A
Technical parameters/rise time: 54.0 ns
Technical parameters/Input capacitance (Ciss): 1030pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7343TRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7343TRPBF 双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
|
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