Technical parameters/forward voltage: 800mV @15A
Technical parameters/forward current: 30 A
Technical parameters/Maximum forward surge current (Ifsm): 250 A
Technical parameters/forward voltage (Max): 930 mV
Technical parameters/forward current (Max): 30 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 2.7 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.35 mm
External dimensions/packaging: TO-262-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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VISHAY | 功能相似 | TO-262 |
双高压Trench MOS势垒肖特基整流器超低VF = 0.455 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
|
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VI30100C-E3/4W
|
Vishay Semiconductor | 功能相似 | TO-262-3 |
双高压Trench MOS势垒肖特基整流器超低VF = 0.455 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
|
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