Technical parameters/dissipated power: 110 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 2200pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3205ZPBF
|
IFC | 功能相似 |
55V,75A,6.5mΩ,N沟道功率MOSFET
|
|||
IRL3803PBF
|
Infineon | 功能相似 | TO-220-3 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.006Ω; ID 140A; TO-220AB; PD 200W; VGS +/-16V
|
||
IRL3803PBF
|
International Rectifier | 功能相似 | TO-220-3 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.006Ω; ID 140A; TO-220AB; PD 200W; VGS +/-16V
|
||
STP95N04
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道40V - 5.4mohm - 80A - DPAK - TO- 220的STripFET功率MOSFET N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET
|
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