Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.006 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/breakdown voltage of gate source: ±15.0 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 165 ns
Technical parameters/Input capacitance (Ciss): 4050pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 55 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP85NF55
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP85NF55 场效应管, MOSFET
|
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