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Model STP360N4F6
Description N Channel STripFET ™ DeepGate ™， STMicroelectronics STripFET ™ MOSFET， The bandwidth breakdown voltage range can provide ultra-low gate telephone and low on resistance. ###MOSFET transistor, STMicroelectronics
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Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
23.89  yuan 23.89yuan
5+:
$ 27.9478
50+:
$ 26.7534
200+:
$ 26.0846
500+:
$ 25.9174
1000+:
$ 25.7502
2500+:
$ 25.5591
5000+:
$ 25.4397
7500+:
$ 25.3202
Quantity
5+
50+
200+
500+
1000+
Price
$27.9478
$26.7534
$26.0846
$25.9174
$25.7502
Price $ 27.9478 $ 26.7534 $ 26.0846 $ 25.9174 $ 25.7502
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8260) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 1.8 mΩ

Technical parameters/dissipated power: 300 W

Technical parameters/threshold voltage: 4.5 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/leakage source breakdown voltage: 40 V

Technical parameters/rise time: 182 ns

Technical parameters/Input capacitance (Ciss): 17930pF @25V(Vds)

Technical parameters/rated power (Max): 300 W

Technical parameters/descent time: 130 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 300W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.4 mm

External dimensions/width: 4.6 mm

External dimensions/height: 15.75 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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