Technical parameters/rated voltage (DC): 700 V
Technical parameters/rated current: 5.00 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 110W (Tc)
Technical parameters/drain source voltage (Vds): 700 V
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/Input capacitance (Ciss): 930pF @25V(Vds)
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD3NK50ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
||
STP9NK70Z
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP9NK70Z 功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
|
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