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Model STP11N60DM2
Description N-Channel 600 V 0.420 Ohm flange installation MDmesh ™ DM2 power MOSFET - TO-220-3
Product QR code
Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
7.57  yuan 7.57yuan
10+:
$ 9.0864
100+:
$ 8.6321
500+:
$ 8.3292
1000+:
$ 8.3141
2000+:
$ 8.2535
5000+:
$ 8.1778
7500+:
$ 8.1172
10000+:
$ 8.0869
Quantity
10+
100+
500+
1000+
2000+
Price
$9.0864
$8.6321
$8.3292
$8.3141
$8.2535
Price $ 9.0864 $ 8.6321 $ 8.3292 $ 8.3141 $ 8.2535
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6290) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.37 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 110 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 614 pF

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 10A

Technical parameters/rise time: 6.3 ns

Technical parameters/Input capacitance (Ciss): 614pF @100V(Vds)

Technical parameters/descent time: 9.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 110W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP10NM60N STP10NM60N ST Microelectronics 类似代替 TO-220-3
STMICROELECTRONICS STP10NM60N 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
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