Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 12.0 A
Technical parameters/drain source resistance: 400 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1000pF @25V(Vds)
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP12NM50
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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