Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0068 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/input capacitance: 4369 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 4369pF @50V(Vds)
Technical parameters/rated power (Max): 150 W
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: medical
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPP072N10N3GXKSA1
|
Infineon | 功能相似 | TO-220-3 |
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP072N10N3GXKSA1, 80 A, Vds=100 V, 3引脚 TO-220封装
|
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