Technical parameters/access time: 25 ns
Technical parameters/access time (Max): 25 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: PDIP-28
External dimensions/packaging: PDIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
C25M
|
Cypress Semiconductor | 功能相似 | DIP |
8KX8 NON-VOLATILE SRAM, 25ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28
|
||
STK12C68-PF25I
|
Cypress Semiconductor | 类似代替 | PDIP-28 |
64千位( 8K ×8 )自动存储的nvSRAM 64 Kbit (8K x 8) AutoStore nvSRAM
|
||
|
|
ETC | 类似代替 |
64千位( 8K ×8 )自动存储的nvSRAM 64 Kbit (8K x 8) AutoStore nvSRAM
|
|||
U631H64BDC25G1
|
Zentrum Mikroelektronik Dresden | 功能相似 | DIP |
SoftStore 8K x 8 nvSRAM
|
||
U631H64BDK25G1
|
Zentrum Mikroelektronik Dresden | 功能相似 | DIP |
SoftStore 8K x 8 nvSRAM
|
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