Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 160 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 160 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 21A
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 2400pF @50V(Vds)
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 8.95 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP25NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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