Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 35 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 28A
Technical parameters/rise time: 8.7 ns
Technical parameters/Input capacitance (Ciss): 2700pF @100V(Vds)
Technical parameters/rated power (Max): 30 W
Technical parameters/descent time: 7.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 35W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 10.85 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF34N65M5
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ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
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