Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/Input capacitance (Ciss): 1300pF @50V(Vds)
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB14NM65N
|
ST Microelectronics | 功能相似 | TO-263-3 |
N沟道650 V， 0.33 Ω ， 12一个的MDmesh II ™功率MOSFET TO- 220 ， TO- 220FP ， D2PAK ， I2PAK ， TO- 247 N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
|
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STP14NM65N
|
ST Microelectronics | 功能相似 | TO-220-3 |
N沟道650 V， 0.33 Ω ， 12一个的MDmesh II ™功率MOSFET TO- 220 ， TO- 220FP ， D2PAK ， I2PAK ， TO- 247 N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
|
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