Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 41.7 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 165 ns
Technical parameters/Input capacitance (Ciss): 11400pF @25V(Vds)
Technical parameters/descent time: 62.6 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 41.7W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP260N6F6
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP260N6F6 晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review