Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.73 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 20 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 5A
Technical parameters/rise time: 4.4 ns
Technical parameters/Input capacitance (Ciss): 364pF @50V(Vds)
Technical parameters/rated power (Max): 20 W
Technical parameters/descent time: 8.8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 20W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 16.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF7NM50N
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道500V - 0.70ヘ - 5A - TO- 220 - TO- 220FP - IPAK - DPAK第二代MDmesh⑩功率MOSFET N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
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